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DISCRETE SEMICONDUCTORS
DATA SHEET
BUW11W; BUW11AW Silicon diffused power transistors
Product specification File under Discrete Semiconductors, SC06 1997 Aug 14
Philips Semiconductors
Product specification
Silicon diffused power transistors
DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package.
e
BUW11W; BUW11AW
APPLICATIONS * Converters * Inverters * Switching regulators * Motor control systems.
MBB008
2 1 3
PINNING PIN 1 2 3 DESCRIPTION base collector; connected to mounting base emitter
1
2
3
MBK117
Fig.1 Simplified outline (SOT429) and symbol.
QUICK REFERENCE DATA SYMBOL VCESM BUW11W BUW11AW VCEO collector-emitter voltage BUW11W BUW11AW VCEsat IC ICM Ptot tf collector-emitter saturation voltage collector current (DC) collector current (peak value) total power dissipation fall time see Figs 7 and 9 see Figs 2 and 4 see Fig 2 Tmb 25 C; see Fig.3 resistive load; see Figs 11 and 12 open base 400 450 1.5 5 10 100 0.8 V V V A A W s PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT
THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1.25 UNIT K/W
1997 Aug 14
1
Philips Semiconductors
Product specification
Silicon diffused power transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM PARAMETER collector-emitter peak voltage BUW11W BUW11AW VCEO collector-emitter voltage BUW11W BUW11AW ICsat collector saturation current BUW11W BUW11AW IC ICM IB IBM Ptot Tstg Tj collector current (DC) collector current (peak value) base current (DC) base current (peak value) total power dissipation storage temperature junction temperature tp < 2 ms Tmb 25 C; see Fig.3 see Figs 2 and 4 tp < 2 ms; see Fig 2 open base VBE = 0 CONDITIONS
BUW11W; BUW11AW
MIN. - - - - - - - - - - - -65 -
MAX. 850 1000 400 450 3 2.5 5 10 2 4 100 +150 150 V V V V A A A A A A W
UNIT
C C
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VCEOsust PARAMETER CONDITIONS MIN. 400 450 IC = 3 A; IB = 600 mA; see Figs 7 and 9 IC = 2.5 A; IB = 500 mA; see Figs 7 and 9 IC = 3 A; IB = 600 mA; see Fig.7 IC = 2.5 A; IB = 500 mA; see Fig.7 VCE = VCESMmax; VBE = 0; note 1 VCE = VCESMmax; VBE = 0; Tj = 125 C; note 1 IEBO hFE emitter-base cut-off current DC current gain VEB = 9 V; IC = 0 VCE = 5 V; IC = 5 mA; see Fig.10 VCE = 5 V; IC = 500 mA; see Fig.10 - - TYP. - - - - MAX. - - 1.5 1.5 UNIT V V V V
collector-emitter sustaining voltage IC = 100 mA; IBoff = 0; L = 25 mH; see Figs 5 and 6 BUW11W BUW11AW collector-emitter saturation voltage BUW11W BUW11AW
VCEsat
VBEsat
base-emitter saturation voltage BUW11W BUW11AW - - - - - 10 10 - - - - - 18 20 1.4 1.4 1 2 10 35 35 V V mA mA mA
ICES
collector-emitter cut-off current
1997 Aug 14
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11W; BUW11AW
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Switching times resistive load (see Figs 11 and 12) ton turn-on time BUW11W BUW11AW ts storage time BUW11W BUW11AW tf fall time BUW11W BUW11AW ICon = 3 A; IBon = -IBoff = 600 mA - - - 0.8 0.8 s s ICon = 2.5 A; IBon = -IBoff = 500 mA - ICon = 3 A; IBon = -IBoff = 600 mA - - - 4 4 s s ICon = 2.5 A; IBon = -IBoff = 500 mA - ICon = 3 A; IBon = -IBoff = 600 mA - - - 1 1 s s ICon = 2.5 A; IBon = -IBoff = 500 mA -
Switching times inductive load (see Figs 13 and 14) ts storage time BUW11W ICon = 3 A; IB = 600 mA ICon = 3 A; IB = 600 mA; Tj = 100 C BUW11AW ICon = 2.5 A; IB = 500 mA ICon = 2.5 A; IB = 500 mA; Tj = 100 C tf fall time BUW11W ICon = 3 A; IB = 600 mA ICon = 3 A; IB = 600 mA; Tj = 100 C BUW11AW ICon = 2.5 A; IB = 500 mA ICon = 2.5 A; IB = 500 mA; Tj = 100 C Note 1. Measured with a half-sinewave voltage (curve tracer). - - - - 80 140 80 140 150 300 150 300 ns ns ns ns - - - - 1.1 1.2 1.1 1.2 1.4 1.5 1.4 1.5 s s s s
1997 Aug 14
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11W; BUW11AW
handbook, full pagewidth
102
MGB948
IC (A)
10
ICM max IC max (1) II
1
I 10-1
(2)
III
10-2
DC
10-3 10
BUW11W BUW11AW 102
IV 103 VCE (V) 104
Tmb 25 C. I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation. III - Area of permissible operation during turn-on in single transistor converters, provided RBE 100 and tp 0.6 s. IV - Repetitive pulse operation in this region is permissible provided VBE 0 and tp 5 ms. (1) Ptot max line. (2) Second breakdown limits.
Fig.2 Forward bias SOAR.
1997 Aug 14
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11W; BUW11AW
MGD283
120 handbook, halfpage Ptot max (%) 80
handbook, halfpage
5
MGB895
IC (A)
4
3
2 40 1
(1) (2)
0 0 50 100 Tmb (oC) 150
0 0 400 1200 800 V CE (V)
(1) BUW11W. (1) BUW11AW.
Fig.3 Power derating curve.
Fig.4 Reverse bias SOAR.
handbook, halfpage
+ 50 V 100 to 200 L horizontal oscilloscope
I halfpage handbook,C (mA) 250 200
MGE239
100
vertical 300 1
MGE252
6V 30 to 60 Hz
0
VCE (V) min VCEOsust
Fig.5
Test circuit for collector-emitter sustaining voltage.
Fig.6
Oscilloscope display for collector-emitter sustaining voltage.
1997 Aug 14
5
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11W; BUW11AW
handbook, full pagewidth
2.0
MGB913
VBEsat VCEsat (V) 1.5
1.0
(1) (2)
0.5 (3) (4) 0 10-2 IC/IB = 5. (1) VBE; Tj = 25 C. (2) VBE; Tj = 100 C. 10-1 (3) VCE; Tj = 25 C. (4) VCE; Tj = 25 C. 1 10
IC (A)
Fig.7 Base-emitter and collector-emitter saturation voltages as functions of collector current; typical values.
handbook, full pagewidth
1.6
MGB910
VBE (V) 1.4 (1)
1.2
(2)
(3) 1.0
0.8 0 Tj = 25 C. (1) IC = 5 A. 0.25 (2) IC = 3 A. (3) IC = 1.5 A. 0.5 0.75 1.0 1.25 IB (A) 1.5
Fig.8 Base-emitter voltage as a function of base current; typical values.
1997 Aug 14
6
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11W; BUW11AW
handbook, halfpage
10
MGB873
2 10 handbook, halfpage
MBC095
(1) VCEsat (V)
(2)
(3) hFE VCE = 5 V 1V
1
10
10-1 10-2
10-1
1
IB (A)
10
1 10-2
10-1
1
10 IC (A)
102
(1) IC = 1.5 A. (2) IC = 3 A. (3) IC = 5 A. Tj = 25 C; solid line: typical values; dotted line: maximum values.
Fig.9
Collector-emitter saturation voltage as a function of base current; typical values.
Fig.10 DC current gain; typical values.
handbook, halfpage
tr -IB on
MBB730
90%
handbook, halfpage
VCC
-IB 10% t
RL VIM 0 tp T
MGE244
-IB off D.U.T. 90% -IC -IC on
RB
10% ton VCC = 250 V; tp = 20 s; VIM = -6 to +8 V; tp/T = 0.01. The values of RB and RL are selected in accordance with ICon and IBon requirements. tf t
ts toff
Fig.11 Test circuit resistive load.
Fig.12 Switching time waveforms with resistive load.
1997 Aug 14
7
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11W; BUW11AW
handbook, halfpage
tr IB on
90% IB 10%
handbook, halfpage
VCC LC -IB off VCL D.U.T. 90% IC on
t
+IB -VBE
LB
MGE246
IC
10% tf t
ts toff VCL = 300 V; VCC = 30 V; VBE = -5 V; LB = 1 H; LC = 200 H.
MGE238
Fig.13 Test circuit inductive load.
Fig.14 Switching time waveforms with inductive load.
1997 Aug 14
8
Philips Semiconductors
Product specification
Silicon diffused power transistors
PACKAGE OUTLINE
BUW11W; BUW11AW
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-247
SOT429
E P
A A1 q S
R D Y
L1(1) Q b2 L
1
2 b b1 e e
3 wM c
0
10 scale
20 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 5.3 4.7 A1 1.9 1.7 b 1.2 0.9 b1 2.2 1.8 b2 3.2 2.8 c 0.9 0.6 D 21 20 E 16 15 e 5.45 L 16 15 L1 4.0 3.6 P 3.7 3.3 Q 2.6 2.4 q 5.3 R 3.5 3.3 S 7.5 7.1 w 0.4 Y 15.7 15.3 6 4 17 13
Note 1. Terminals are uncontrolled within zone L1. OUTLINE VERSION SOT429 REFERENCES IEC JEDEC TO-247 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-11
1997 Aug 14
9
Philips Semiconductors
Product specification
Silicon diffused power transistors
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BUW11W; BUW11AW
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Aug 14
10
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
137067/00/01/pp12
Date of release: 1997 Aug 14
Document order number:
9397 750 02727

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